InnovationsSamsung creates radio frequency architecture for 5G chips with 35% performance gains

Most communication chips have decayed performance of the receiving frequency and increased energy consumption over time. With this, the new circuits will offer significant advances in relation to traditional analog radio frequency blocks due to the limitations never corrected until then.
16 June, 20215 min
Samsung creates radio frequency architecture for 5G chips with 35% performance gains

Samsung, a leading company in advanced semiconductor production and currently representing the 4th largest share in the chipset market, has announced the development of a new radio frequency-based technology for processors with 5G connectivity of sub-6GHz applications in millimeter waves (mmWave).

Using the 8-nanometer lithography, expressly reduced compared to previous generations of solutions by 28 and 14 nanometers, South Korea expects new processors with the RF extreme FET architecture, as it was named, to offer gains of up to 35% in energy efficiency and a significant reduction in chipset occupancy.

The small manufacturing process will allow 5G communications through the architecture to be incorporated with multichannel design and multiple antennas. The company will use this technology to deliver fifth-generation mobile network controllers to partner manufacturers.

Through excellence in innovation and process manufacturing, we reinforce our state-of-the-art wireless communication offerings. As the 5G mmWave expands, Samsung’s 8nm RF will be a great solution for customers looking for long battery life and excellent signal quality on compact mobile devices. Hyung Jin Lee

Foundry Technology Team Leader at Samsung

Most communication chips have decayed performance of the receiving frequency and increased energy consumption over time. With this, the new circuits will offer significant advances in relation to traditional analog radio frequency blocks due to the limitations never corrected until then.

Compared to 14nm RF, Samsung’s 8nm RF process technology provides up to a 35-percent increase in power efficiency with a 35-percent decrease in the RF chip area as a result of the RFeFET™ architectural innovation.

Samsung has not detailed the period of this new technology will be made available on the market, but it is suggested that the RFeFET architecture is ready to integrate the various mobile device processors in circulation in the market.

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